OPTIMIZATION OF SILICON SOLAR CELL BASE THICKNESS, WHILE ILLUMINATED BY A LONG WAVELENGTHMONOCHROMATIC LIGTH: INFLUENCE OF BOTH LORENTZ LAW AND UMKLAPP PROCESS

descriptionPublicationkeyboard_double_arrow_right Article 16 Aug 2022Publisher:Zenodo

Authors: Sega Diagne, Ousmane Sow; Richard Mane, Ibrahima Diatta; , Youssou Traore , Lemrabott Habiboullah; Wade, Mamadou;

doi: 10.5281/zenodo.7053654 , 10.5281/zenodo.7053653

OPTIMIZATION OF SILICON SOLAR CELL BASE THICKNESS, WHILE ILLUMINATED BY A LONG WAVELENGTHMONOCHROMATIC LIGTH: INFLUENCE OF BOTH LORENTZ LAW AND UMKLAPP PROCESS

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Abstract

The optimum thickness of a silicon solar cell base is determined using phenomelogic parameters, which are the minority carriers diffusion coefficient and the recombination velocity at the back side, influenced by Lorentzs law and the Umklapp process.The results obtained are consistent with the generation of minority charge carriers deep in the base by a monochromatic light of long wavelength.

Related Organizations

École Polytechnique de Thiès
Senegal
École Supérieure Multinationale des Télécommunications
Senegal
Instituts Universitaires de Technologie
France

Keywords

Silicon Solar Cell Diffusion Coefficient Absorption coefficient Surface Recombination Velocity Optimum Base Thickness Lorentz and Umklapp Processes

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