In our previous works the possibility of growing silicon rods suitable for FZ process was shown, however, the use of the high-energy process such as electron beam melting (EBM) may lead to generation of impurities which substantially reduce the efficiency of solar cells. EBM grown rods were recrystallized with FZ. Due to FZ process purity all impurities are relied to EBM process and rod growth. FTIR was used to conrtol levels of impurities. Slight removal of phosphorus and the generation of boron and aluminium were noticed. The level of contamination is hundreds of ppta and is not crucial for the quality of the single crystals used in solar energy. The attempt to reliably examine the level of other impurities with GDMS analysis has failed due to insignificant quantities of impurities and the high resistance of the monitored sample. High lifetime at the end of the grown single crystal indirectly evidences of the absence of significant contaminations. Thus, single crystals obtained utilising the described technical processes are a promising material for the production of highly-efficient solar cells.

32nd European Photovoltaic Solar Energy Conference and Exhibition; 1015-1017