In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes. The results demonstrate that the threshold voltage (Vth) of the irradiated devices shifted towards negative values due to the radiation-induced positive oxide trapped charges. Moreover, this negative shift in Vth and positive trapped charges of field limiting ring (FLR) oxide led to an increase in output currents and a reduction in the breakdown voltage values.