A single-switch N-stage Z-network high-gain boost converter is proposed in this study, which can be applied in the field of chip etching for bias provision. The circuit topology, operation mode, voltage gain and the control strategy are analyzed. Thereafter, the steady-state performance of the circuit is analyzed with small signal stability modeling. A simulation model is built using Simulink and compared with the traditional quadratic circuit. Combined with the control strategy, the circuit can obtain better steady-state performance by controlling the number of working N-networks and adjusting the duty ratio in the case of high voltage, wide range of voltage output and dynamic voltage output. The simulation model and hardware prototype of the single-switch four-stage Z-network high-gain boost circuit are built and tested, which have verified the effectiveness of the proposed design.