Single Event Transients in CMOS Ring Oscillators
Copyright policy )Single Event Transients in CMOS Ring Oscillators
In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip.
Technology, Science & Technology, Computer Science, Information Systems, Physics, Engineering, Electrical & Electronic, Physics, Applied, Ring Oscillators, 0906 Electrical and Electronic Engineering, Engineering, 4009 Electronics, sensors and digital hardware, Physical Sciences, Computer Science, Single-Event Upsets (SEUs), radiation effects, PHASE NOISE, Radiation Hardening by Design, Impulse Sensitive Function, JITTER
Technology, Science & Technology, Computer Science, Information Systems, Physics, Engineering, Electrical & Electronic, Physics, Applied, Ring Oscillators, 0906 Electrical and Electronic Engineering, Engineering, 4009 Electronics, sensors and digital hardware, Physical Sciences, Computer Science, Single-Event Upsets (SEUs), radiation effects, PHASE NOISE, Radiation Hardening by Design, Impulse Sensitive Function, JITTER
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