An r.f plasma micro-jet apparatus of transferred type for thermal and chemical treatment of re-fractory films has been developed. The plasma micro-jet generator is characterized by highly focusing plasma spot and making ready to generate and stabilize the plasma arc. Rf supply of 4 MHz was used. The operating characteristics, especially the dimension and temperature of plasma spot have been investigated as a function of rf voltage, argon flow rate, stand-off distance, composition of plasma gas, and other parameters of operation.The spot temperature above 3300°C and the spot diameter smaller than 0.3 mm was obtained on operating at the optimum conditions. Heating treatments of sputtered films of TiC and TiN were carried out by scanning with argon plasma micro-jet and argon-nitrogen one, respectively. The development of crystal growth in the film specimens by plasma irradiation were verified by the observation with an electron microscope and an X-ray micro-diffractometer.