
We report on multijunction GaInP/GaAs photovoltaic cells with total‐area efficiencies of 29.5% at one‐sun concentration and air mass (AM) 1.5 global and 25.7% one‐sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed: the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under different solar spectra and under concentration are also discussed.
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