A GIDL-Current Model for Advanced MOSFET Technologies without Binning

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2009 English Publisher:Information Processing Society of JapanJournal:IPSJ Transactions on System LSI Design Methodology, volume 2, pages 93-102 (eissn: 1882-6687,

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Authors: Ryosuke Inagaki; Norio Sadachika; Dondee Navarro; Mitiko Miura-Mattausch; Yasuaki Inoue;

doi: 10.2197/ipsjtsldm.2.93

A GIDL-Current Model for Advanced MOSFET Technologies without Binning

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Abstract

A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning of model parameters. The influence of the GIDL current is investigated with circuits, which are sensitive to the change of the stored charge due to the GIDL current.

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Hiroshima University
Japan
Waseda University
Japan

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