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The Review of Laser Engineering
Article . 1976 . Peer-reviewed
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The Review of Laser Engineering
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https://dx.doi.org/10.2184/lsj...
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TJS Semiconductor Lasers

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1976 English Publisher:Laser Society of JapanJournal:The Review of Laser Engineering, volume 3, pages 224-229 (issn: 0387-0200, eissn: 1349-6603, Copyright policy )
Authors: Makoto ISHII;

doi: 10.2184/lsj.3.224

TJS Semiconductor Lasers

Abstract

A new structure of semiconductor laser which is designated as the transverse-junction-stripe (TJS) laser has been developed. In TJS laser, a very thin GaAs homojunction laser is sandwiched by GaAIAs layers. The minimum threshold current is 36mA at room temperature for continuous operation. The TJS laser shows the fundamental transverse mode up to three times of the threshold current and nearly single longitudinal mode.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
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