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https://doi.org/10.2172/839891...
Report . 2005
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https://dx.doi.org/10.2172/839...
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A Si/CdTe Semiconductor Compton Camera

descriptionPublicationkeyboard_double_arrow_right Report , Other literature type 22 Apr 2005Publisher:Office of Scientific and Technical Information (OSTI)
Authors: S Watanabe;

doi: 10.2172/839891

A Si/CdTe Semiconductor Compton Camera

Abstract

We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are reported. The Compton camera consists of six stacked double-sided Si strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 80 keV to 662 keV. The energy resolution (FWHM) is 10 keV and 16 keV at 356 keV and 511 keV, respectively

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
Average
Average
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