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Artifacts in Secondary Electron Emission Yield Measurements

Authors: R Kirby;

Artifacts in Secondary Electron Emission Yield Measurements

Abstract

Measurement of secondary electron yields and electron energy distributions appears straightforward--simple equipment, simple electronics, easy-to-acquire data, at least in a laboratory setting. Unfortunately, the low secondary electron energy (2-5 eV) and the extreme sensitivity of the yield to surface condition and surrounding environment make the measurement details anything but simple. These problems affect the accuracy and interpretation of the experimental results, often in a subtle way. Most troublesome is the production of unwanted (and unexpected) secondary electrons from within the electron sources and detectors, and tertiary electrons from the surrounding vacuum chamber environment. In addition, the sample surface condition can change during measurement, for example, through electron damage or enhanced oxidation/carburization. Electron source, analyzer, and sample effects will be discussed with examples for oxidized Al, niobium, graphite, gold and, also, TiN coatings.

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
4
Average
Top 10%
Average
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