
doi: 10.2172/6510783
Hydrogenated alloys of a-GaAs have been prepared by rf sputtering in a mixture of argon and hydrogen at several partial pressures, substrate temperatures and rf powers. The results of a systematic investigation of the microstructural properties of these films by SEM and TEM are reported and its correlation with the deposition parameters and other electronic properties is attempted.
Direct Energy Converters, Silicon, Solar Equipment 140501* -- Solar Energy Conversion-- Photovoltaic Conversion, Gallium Arsenide Solar Cells, Photovoltaic Cells, Equipment, Fabrication, Arsenides, Pnictides, Electron Microscopy, Argon, Deposition, Microstructure, Arsenic Compounds, Microscopy, Fluids, Substrates, Photoelectric Cells, Chemical Reactions, Gallium Arsenides, Sputtering, 14 Solar Energy, Elements, Rare Gases, Solar Cells, Nonmetals, Gallium Compounds, Crystal Structure, Transmission Electron Microscopy, Gases, Scanning Electron Microscopy, Hydrogenation, Semimetals, Hydrogen
Direct Energy Converters, Silicon, Solar Equipment 140501* -- Solar Energy Conversion-- Photovoltaic Conversion, Gallium Arsenide Solar Cells, Photovoltaic Cells, Equipment, Fabrication, Arsenides, Pnictides, Electron Microscopy, Argon, Deposition, Microstructure, Arsenic Compounds, Microscopy, Fluids, Substrates, Photoelectric Cells, Chemical Reactions, Gallium Arsenides, Sputtering, 14 Solar Energy, Elements, Rare Gases, Solar Cells, Nonmetals, Gallium Compounds, Crystal Structure, Transmission Electron Microscopy, Gases, Scanning Electron Microscopy, Hydrogenation, Semimetals, Hydrogen
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