Ultrasonic characterization of microwave joined silicon carbide/silicon carbide
Ultrasonic characterization of microwave joined silicon carbide/silicon carbide
High frequency (50--150 MHz), ultrasonic immersion testing has been used to characterize the surface and interfacial joint conditions of microwave bonded, monolithic silicon carbide (SiC) materials. The high resolution ultrasonic C-scan images point to damage accumulation after thermal cycling. Image processing was used to study the effects of the thermal cycling on waveform shape, amplitude and distribution. Such information is useful for concurrently engineering material fabrication processes and suitable nondestructive test procedures.
- University of North Texas United States
42 Engineering Not Included In Other Categories, Silicon Carbides, Thermal Cycling, Adhesives, 36 Materials Science, Image Processing, Ultrasonic Testing, Experimental Data, Joining, Microwave Heating
42 Engineering Not Included In Other Categories, Silicon Carbides, Thermal Cycling, Adhesives, 36 Materials Science, Image Processing, Ultrasonic Testing, Experimental Data, Joining, Microwave Heating
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