Abstract : The AFOSR Optoelectronics Research Center (OERC) at the Center for High Technology Materials of the University of New Mexico has become a leading university optoelectronics program. Novel InGaAs and AlGaAs device structures have been pioneered. Exciting recent results include demonstration of large second-order nonlinearities in SiO2 and extensive development of PLZT. Processing advances include investigation of III-V regrowth over patterned wafers and the extension of interferometric lithography techniques. External cavity operation of diode lasers has provided a wealth of information about internal device physics and the fundamental limits of laser spectral and temporal characteristics. Single element and array geometries modeling has led to greater understanding and device performance. The OSR OERC has pioneered development of surface-emitting lasers. Since the first demonstration of the resonant-periodic gain concept was reported several years ago, advances have been made in device and mirror design, optical pumping with record output powers, in ultrafast gain switched operation, in record low series resistance, and overall and slope efficiencies for electrical operation. A recent advance in integrated structures is the coupling of phototransistors with surface-emitting lasers to make smart pixels that can operate in parallel on an array of optical signals. optoelectronics, device structures, PLZT, III-V materials growth, diode lasers.