Abstract : Gallium Nitride (GaN), a direct bandgap semiconductor, has a room temperature energy gap (Eg) of 3.39 eV. It forms a completely miscible solution with In (which decreases Eg) and Al (which increases Eg). Thus, light output wavelength can be tuned via bandgap engineering or via the introduction of appropriate impurities to form luminescent color centers. In principle, LEDs and lasers spanning the entire visible spectrum can be fabricated with (Ga-In-Al)N system.