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INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR

Authors: Kroičs, Kaspars; Saltanovs, Rodions;

INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR

Abstract

Input filter is essential part of each switched mode power supply design. Important issue that must be solved in the design process is control of the high inrush current due to rapid rise of the voltage during initial connection of the power to the power supply. In the paper a single IGBT or MOSFET transistor is applied to control dv/dt in order to limit the high current spikes during initial power turn on or to limit overcurrent in microarc oxidation process. This inrush current limiting technique is beneficial because dv/dt control reduces the electromagnetic interference due to current and voltage spikes. As inrush current limiting device has minimal parts count the design is cost effective and reliable.

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Keywords

microarc oxidation process; IGBT driver; inrush current limiting

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selected citations
These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Citations provided by BIP!
popularity
This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
BIP!Popularity provided by BIP!
influence
This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
BIP!Influence provided by BIP!
impulse
This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.
BIP!Impulse provided by BIP!
0
Average
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