
In this paper we present a high frequency noise model for short channel HEMTs.This model takes into account the effect of depletion region that extends into gate to drain spacing.The effect of this high field extension region on the noise performance of three HEMT structures is analytically calculated and compared with measured data.
Noise Modeling, HEMTs, ING-INF/01 Elettronica, MODFETs
Noise Modeling, HEMTs, ING-INF/01 Elettronica, MODFETs
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