AbstractWe have developed two types of devices for silicon-single-electronics; a single-electron transistor (SET) and a single-electron charge coupled device (CCD). Both devices were fabricated on SOI (silicon on insulator) wafers. For the SET fabrication, we used a novel method called pattern-dependent oxidation (PADOX), which exploits special phenomena that occur during thermal oxidation of a small silicon structure. The Si structures are converted into small Si SETs by consequence of stress-induced bandgap narrowing and quantum size effects. Since the size of the resultant Si island is about 10 nm, the SETs operate at relatively high temperatures. We have already developed several kinds of application of Si SETs by utilizing the special features of SETs. In addition, we have developed a single-electron CCD that enables us to manipulate a single electron without tunnel capacitors. The device utilizes small Si-wire MOSFETs connected in series, and an elementary charge can be transferred like in a CCD.