AbstractFerroelectrics used in a memory device such as (Pb,La)(Zr,Ti)O3 (PLZT) are vulnerable to reducing atmosphere and lose remanent polarization easily. In the semiconductor processes, hydrogen gas is generated both from deposition gas of interlayer dielectric and from reaction between metals and moisture in the dielectric. Improving the ferroelectrics resistance to reducing environments is required for the planarization and multi-layer interconnections in future devices. Loss of remanent polarization is related to the imprint properties of the capacitor and can be improved by controlling the deposition condition of sol-gel PLZT and annealing IrOx electrode in oxygen.