Ambipolar Field Effect Transistor

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1985 English Publisher:Springer Science and Business Media LLCJournal:MRS Proceedings, volume 49 (issn: 0272-9172, eissn: 1946-4274,

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Authors: Hans Pfleiderer; Wilhelm Kusian;

doi: 10.1557/proc-49-361 , 10.1016/0038-1101(86)90210-8

Ambipolar Field Effect Transistor

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Abstract

AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.

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SIEMENS AG
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Siemens (Germany)
Germany

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