AbstractDevice-grade, boron-doped amorphous hydrogenated silicon can be made microporous by anodization in ethanoic HF. The thickness of the porous layer is limited by an instability due to the high resistivity of the material. Amorphous porous silicon exhibits strong room-temperature photoluminescence around 1.5 eV even in samples containing a high density of non-radiative recombination centers. This demonstrates the presence of a spatial confinement effect, as opposed to quantum confinement effect for crystalline porous silicon. The temperature dependence of the luminescence intensity is also accounted for on the same grounds.