Demonstration of a silicon Raman laser

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2004 English Publisher:Optica Publishing GroupJournal:Optics Express, volume 12, page 5,269 (eissn: 1094-4087,

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Authors: Ozdal, Boyraz; Bahram, Jalali;

doi: 10.1364/opex.12.005269

pmid: 19484086

Demonstration of a silicon Raman laser

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Abstract

We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.

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University of California, Los Angeles
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University of California System
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