
doi: 10.1364/oe.27.00a269
pmid: 31052881
A novel back-contacted solar cell based on a submicron copper indium gallium (di)selenide (CIGS) absorber is proposed and optically investigated. First, charge carrier collection feasibility is studied by band diagram analysis. Then, two back-contacted configurations are suggested and optimized for maximum current production. The results are compared with a reference front/back-contacted CIGS solar cell with a 750-nm-thick absorber. Current density production of 38.84 mA/cm2 is predicted according to our simulations for a realistic front-side texturing. This shows more than 38% improvement in optical performance compared to the reference cell and only 7.7% deviation from the theoretical Green absorption benchmark.
Solar cells, Band diagrams, Industrial Innovation, Front side texturing, Gallium compounds, Submicron, Optical performance, Carrier collection, Optical study, Benchmarking, Current production, CIGS solar cells
Solar cells, Band diagrams, Industrial Innovation, Front side texturing, Gallium compounds, Submicron, Optical performance, Carrier collection, Optical study, Benchmarking, Current production, CIGS solar cells
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