A horizontal linear gradient two zone furnace has been employed to grow single crystals of semiconducting compounds by physical vapour deposition (PVD) method. It was calibrated for various trials including, series and parallel combination of coils, and set temperatures. The temperature profile of the furnace was studied by recording temperature versus distance along the axis of the furnace using chromel-alumel thermocouples. The results were analyzed systematically and the optimum conditions for setting source zone and growth zone temperature were identified.