Kinetic Transport in Scaled High Electron Mobility Transistors

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2004Publisher:IOP PublishingJournal:Physica Scripta, volume 69, pages 170-175 (issn: 0031-8949, eissn: 1402-4896,

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Authors: A Kwang-Hua Chu; A Kwang-Hua Chu;

doi: 10.1238/physica.regular.069a00170

Kinetic Transport in Scaled High Electron Mobility Transistors

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Abstract

Summary: Quantum discrete kinetic model and diffuse-reflection type boundary conditions are adopted to solve the (ballistic) transport problem of many fermions within a confined slender microdomain. Our preliminary results for gate lengths of 90, 70, and 50 nm resemble those reported by Kalna and Asenov [Semiconductort Sci. Technol. 17, 597 (2002)].

Related Organizations

Northeast Normal University
China (People's Republic of)

Keywords

Statistical mechanics of semiconductors, Transport processes in time-dependent statistical mechanics

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