High Electron Mobility Transistors Using AlGaN Materials
High Electron Mobility Transistors Using AlGaN Materials
High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications
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Engineering Science and Materials, bepress|Engineering, ECSarXiv|Engineering|Engineering Science and Materials|Mechanics of Materials, bepress|Engineering|Engineering Science and Materials|Other Engineering Science and Materials, bepress|Medicine and Health Sciences, bepress|Engineering|Engineering Science and Materials, ECSarXiv|Engineering|Engineering Science and Materials, ECSarXiv|Medicine and Health Sciences, Engineering, bepress|Engineering|Engineering Science and Materials|Mechanics of Materials, Mechanics of Materials, Medicine and Health Sciences, Other Engineering Science and Materials, ECSarXiv|Engineering, ECSarXiv|Engineering|Engineering Science and Materials|Other Engineering Science and Materials
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