Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2009 Netherlands English Publisher:The Electrochemical SocietyJournal:Electrochemical and Solid-State Letters, volume 12, page D49 (issn: 1099-0062,

Copyright policy )

Authors: van Dorp, D.H.; den Otter, J.H.; Hijnen, N.; Bergmeijer, M.; Kelly, J.J.;

doi: 10.1149/1.3115404

Influence of Electrochemical Etching on Electroluminescence from n-Type 4H- and 6H-SiC

- Summary
- Metrics

Abstract

The influence of electrochemical etching on the electroluminescence properties of n-type 6H- and 4H-SiC was investigated. Luminescence was generated by forward-biasing the semiconductor in an electrolyte solution containing a hole-injecting species. The emission properties of unetched, uniformly etched, and porous-etched substrates are compared. It is shown that the spectral distribution of the luminescence and the emission intensity strongly depends on photoanodic treatment.

Country

Netherlands

Related Organizations

Utrecht University
Netherlands

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	4
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average