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Greatly Enhanced Sub‐Bandgap Photocurrent in Porous GaP Photoanodes

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1996Publisher:The Electrochemical SocietyJournal:Journal of The Electrochemical Society, volume 143, pages 1,137-1,142 (issn: 0013-4651, eissn: 1945-7111,

Authors: Daniel Vanmaekelbergh; F. Iranzo Marín; M. A. Hamstra;

doi: 10.1149/1.1836597

Greatly Enhanced Sub‐Bandgap Photocurrent in Porous GaP Photoanodes

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Abstract

It has been found that porous GaP photoanodes show considerable photocurrent when illuminated with sub-bandgap light, in contrast to flat electrodes. The origin of this enhanced response to sub-bandgap light was investigated. Due to the morphology of the porous structure, photons are more effectively absorbed. Light absorption by surface electronic levels is found to be an important source of sub-bandgap photocurrent.

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Utrecht University
Netherlands

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