Silicon-added SrBi2Ta2O7 (SBT) thin films were fabricated on a Pt/Ti/SiO2/Si substrate by metal-organic decomposition (MOD), and then a Pt top electrode was deposited on the SBT thin film by DC magnetron sputtering. The remanent polarization and the relative dielectric constant of the SBT thin film decreased as the amount of silicon addition increased. The SBT thin film had a randomly oriented structure. The X-ray diffraction pattern of the SBT thin film changed negligibly even if silicon was added. The silicon-added SBT thin film showed a comparatively excellent fatigue characteristic. The silicon-added SBT thin film is suitable for application in ferroelectric gate field-effect-transistor type memory because of its excellent fatigue characteristic, low remanent polarization and low relative dielectric constant.