
doi: 10.1137/0909005
The author considers the steady state semiconductor equations, and discusses the convergences properties of Gummel's iterative method for their solution, using the \(L_{\infty}\) norm. It is shown that the convergence depends on the bias potentials. A detailed discussion is given of the numerical results obtained in one particular model of a mosfet.
Technical applications of optics and electromagnetic theory, convergences, bias potentials, Applications to the sciences, Numerical methods for partial differential equations, boundary value problems, Gummel's iterative method, steady state semiconductor equations, numerical results, Numerical methods for partial differential equations, initial value and time-dependent initial-boundary value problems, Simulation, Probabilistic models, generic numerical methods in probability and statistics
Technical applications of optics and electromagnetic theory, convergences, bias potentials, Applications to the sciences, Numerical methods for partial differential equations, boundary value problems, Gummel's iterative method, steady state semiconductor equations, numerical results, Numerical methods for partial differential equations, initial value and time-dependent initial-boundary value problems, Simulation, Probabilistic models, generic numerical methods in probability and statistics
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