MOCVD of CMT

G. T. Jenkin; J. Thompson; M. J. Hyliands; K. T. Woodhouse; V. Vincent

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https://doi.org/10.1...arrow_drop_down

https://doi.org/10.1117/12.951...

Article . 1986 . Peer-reviewed

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https://dx.doi.org/10.1117/12....

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MOCVD of CMT

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 09 Jul 1986Publisher:SPIEJournal:SPIE Proceedings, volume 587, page 76 (issn: 0277-786X,

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Authors: G. T. Jenkin; J. Thompson; M. J. Hyliands; K. T. Woodhouse; V. Vincent;

doi: 10.1117/12.951204

MOCVD of CMT

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Abstract

Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe) (0

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