The Hot Electron Light Emitting and Lasing Semiconductor Heterostructure (HELLISH) vertical cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the layers of Ga x Al 1-x As p - n junction. The fabrication of these devices is very simple and requires only two top contacts that are diffused throughout the heterolayers. Light emission is independent of the polarity of the applied bias. Room temperature pulsed operation of the device as a VCSEL has already been demonstrated where an output power of 5.5 mW in single longitudinal mode has been obtained. In the devices we have studied to date the recombination takes place in a wide GaAs quantum well(L Z = 130A) placed on the n-side of the depletion region. In the current work we present the experimental results from a HELLISH-VCSEL where a narrower quantum well (L Z =70A) is placed on the p-side of the junction plane. The doping and other structural parameters are optimized for more efficient injection of hot electron-hole pairs into the well. Experimental results concerning the reflectivity, spectral EL, and L - F measurements were carried out at temperatures between 77K and 300K.