Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability

A. Driskill-Smith; S. Watts; V. Nikitin; D. Apalkov; D. Druist; R. Kawakami; X. Tang; X. Luo; A. Ong; E. Chen

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https://doi.org/10.1109/vlsit....

Article . 2010 . Peer-reviewed

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https://dx.doi.org/10.1109/vls...

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Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability

descriptionPublicationkeyboard_double_arrow_right Article 01 Jun 2010Publisher:IEEEJournal:2010 Symposium on VLSI Technology

Authors: A. Driskill-Smith; S. Watts; V. Nikitin; D. Apalkov; D. Druist; R. Kawakami; X. Tang; +3 Authors

doi: 10.1109/vlsit.2010.5556124

Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability

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Abstract

The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The implication for the design of 1 Gb STT-RAM is that 10 year room temperature data retention as well as 1000 FIT read disturb error rate requires thermal stability of greater than 75.

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