
In this paper, experiments where current was injected into an IGBT (insulated gated bipolar transistor) during its turn-off transient were carried out. Results showed a significant reduction in the IGBTpsilas collector tail current which could increase the operating frequency for an application. These experiment includes a switching transient test circuit to simulate the collector tail currents, and the implementation of a current injection circuit (CIC) and a non-invasive current injection circuit (NICIC) into the experiments to reduce the collector tail current.
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