Design and Performance of Monolithic GaAs Direct-Coupled Preamplifiers and Main Amplifiers

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 1985 English Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Microwave Theory and Techniques, volume 33, pages 686-692 (issn: 0018-9480,

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Authors: Y. Imai; N. Kato; K. Ohwada; T. Sugeta;

doi: 10.1109/tmtt.1985.1133054

Design and Performance of Monolithic GaAs Direct-Coupled Preamplifiers and Main Amplifiers

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Abstract

The design and performance of a GaAs direct-coupled preamplifier and main amplifier is described. The amplifiers are fabricated by the self-aligned implantation for n/sup +/ -Iayer technology (SAINT) process. The developed preamplifiers have 13-dB gain, 3-GHz bandwidth, and 4.8-dB noise figure for the one-stage amplifier, and 22-dB gain, 2.7-GHz bandwidth, and 5.6-dB noise figure for the two-stage amplifier. The developed four-stage main amplifier has 36-dB gain and 1.5-GHz bandwidth with a power consumption of 710 mW. These amplifiers are promising candidates for application to high-speed data communication systems.

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