Millimeter-Wave Device Technology

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1982Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Transactions on Microwave Theory and Techniques, volume 30, pages 47-55 (issn: 0018-9480, eissn: 1557-9670,

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Authors: A. Rosen; M. Caulton; P. Stabile; A.M. Gombar; W.M. Janton; C.P. Wu; J.F. Corboy; +1 Authors

doi: 10.1109/tmtt.1982.1131016

Millimeter-Wave Device Technology

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Abstract

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques described are ion implantation, laser annealing, unique secondary-ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning, yielding ultrathin, reproducible wafers. The utilization of these technologies, as they are further refined, can result in the development of silicon monolithic integrated sources.

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