Spin transfer torque magnetoresistive random access memory (STT-MRAM) has shown a great promise to be a main stream novel nonvolatile memory technology. Reduction of state switching current still remains to be a continued research focus for scaling down the size of the addressing transistors. One of the switching characteristics attributing to the relatively high power consumption is the asymmetry of switching current threshold: switching from parallel (P) to antiparallel (AP) state requires more than twice as much current as switching from antiparallel to parallel state. In this paper, we present a design that can significant reduce the switching current threshold for switching from P to AP state to substantially reduce or eliminate the switching asymmetry. By incorporating an antiferromagnetic/ferromagnetic stack to provide a rotating spin transfer torque that matches with the ferromagnetic resonance frequency of the free layer, switching threshold can be significantly reduced.