Ultra-Fast Perpendicular Spin–Orbit Torque MRAM
Copyright policy )Ultra-Fast Perpendicular Spin–Orbit Torque MRAM
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications.
15 pages, 3 figures
- University of Belgrade Serbia
- Institute of Physics Netherlands
- University of Paris-Saclay France
- University of Grenoble France
- University College London United Kingdom
Condensed Matter - Materials Science, Cache memory; MRAM; spin-orbit torque-MRAM (SOT-MRAM); spin transfer; spin-orbit torque; spintronics; spin transfer torque-magnetic random access memory (STT-MRAM), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Tunneling magnetoresistance, 530, Magnetization, Current measurement, Torque, [PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Magnetic tunneling, Switches, Pulse measurements
Condensed Matter - Materials Science, Cache memory; MRAM; spin-orbit torque-MRAM (SOT-MRAM); spin transfer; spin-orbit torque; spintronics; spin transfer torque-magnetic random access memory (STT-MRAM), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Tunneling magnetoresistance, 530, Magnetization, Current measurement, Torque, [PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Magnetic tunneling, Switches, Pulse measurements
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