Magnetic Random Access Memory (MRAM) is a new technology which offers a viable alternative to other forms of nonvolatile memory, such as flash, where read access time, writing speed, and cell endurance is at a premium. Difficulties in scaling DRAM below the 32nm node may make MRAM a suitable candidate for DRAM replacement. The rigors of MRAM cell development present array designers, process engineers, and test engineers with many unique challenges. Enabling process development through test support of defect monitors makes test development particularly difficult in MRAM technology, due to the complexity of highly nonlinear magnetic materials and device behaviors. We review a number of new strategies and methodologies employed to support MRAM cell development over several MRAM generations, in a research environment. A unique test system with both advanced digital and parametric capabilities will be described. The importance of database integration within the test software and real-time data analysis will also be discussed.