SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in place even without validating the circuit biasing. In this paper we have tried to bring out the challenges involved in coming up with a valid, industrially useful spice model for SiC MOSFETs.