High-efficiency transferred electron oscillators

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Jan 1969Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:Proceedings of the IEEE, volume 57, pages 1,692-1,693 (issn: 0018-9219,

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Authors: J.F. Reynolds; B.E. Berson; R.E. Enstrom;

doi: 10.1109/proc.1969.7380

High-efficiency transferred electron oscillators

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Abstract

Results of material research and circuit development for high-efficiency GaAs transferred electron oscillators are described, Single-chip devices have been operated with efficiencies as high as 32.2 percent at L-band frequencies. Devices made by paralleling chips have yielded powers as high as 220 watts with 23.2 percent efficiency.

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College of New Jersey
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