An evaporated heterojunction diode strain sensor

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Jan 1969Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:Proceedings of the IEEE, volume 57, pages 735-736 (issn: 0018-9219,

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Authors: R.M. Moore; C.J. Busanovich;

doi: 10.1109/proc.1969.7060

An evaporated heterojunction diode strain sensor

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Abstract

Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto flexible substrate. This sensor's mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source output characteristic.

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College of New Jersey
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