Large-signal transient effect in avalanche diodes

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Jan 1968Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:Proceedings of the IEEE, volume 56, pages 1,727-1,728 (issn: 0018-9219,

Copyright policy )

Authors: P. Penfield;

doi: 10.1109/proc.1968.6717

Large-signal transient effect in avalanche diodes

- Summary
- Metrics

Abstract

A nonlinear transient effect in avalanche diodes is proposed. In this effect, carriers in a bunch sweep across the depletion region, ionizing as they go, and leaving behind an electric field substantially lower than the initial field, and too low to allow further ionization.

Related Organizations

Massachusetts Institute of Technology
United States

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	0
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average