Ring-geometry IMPATT oscillator diodes

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Jan 1968Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:Proceedings of the IEEE, volume 56, pages 1,588-1,589 (issn: 0018-9219,

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Authors: L.P. Marinaccio;

doi: 10.1109/proc.1968.6650

Ring-geometry IMPATT oscillator diodes

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Abstract

Ring-geometry IMPATT diodes have been developed which give 1.15 watts output power at 8.4 to 10 GHz, compared with 0.87 watt obtained from solid-circular-geometry diodes of the same basic design. The improved performance is due to better thermal dissipation in the ring structure.

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Bell Labs
United States

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