Reliability of wide bandgap semiconductor power switching devices

Name: Reliability of wide bandgap semiconductor power switching devices
Creator: Krishna Shenai
Keywords: 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences

Krishna Shenai

Found an issue? Give us feedback

https://doi.org/10.1...arrow_drop_down

https://doi.org/10.1109/naecon...

Article . 2010 . Peer-reviewed

Data sources: Crossref

https://dx.doi.org/10.1109/nae...

Article

Data sources: Microsoft Academic Graph

Reliability of wide bandgap semiconductor power switching devices

descriptionPublicationkeyboard_double_arrow_right Article 01 Jul 2010Publisher:IEEEJournal:Proceedings of the IEEE 2010 National Aerospace & Electronics Conference

Authors: Krishna Shenai;

doi: 10.1109/naecon.2010.5712971

Reliability of wide bandgap semiconductor power switching devices

- Summary
- Metrics

Abstract

Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.

Related Organizations

University System of Ohio
United States
University of Toledo
United States

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	7
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average