A 71.9% power-added-efficiency inverse Class-FLDMOS

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Jan 2006 France Publisher:IEEEJournal:2006 IEEE MTT-S International Microwave Symposium Digest

Authors: Allam, S.; Duperrier, C.; Tolant, C.; Temcamani, Farid; Eudeline, Ph.;

doi: 10.1109/mwsym.2006.249607

A 71.9% power-added-efficiency inverse Class-FLDMOS

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Abstract

Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this one stage power amplifier demonstrate at 2dB power gain compression: 71.9% power added efficiency, 13.2W output power and 16dB power gain. These performances, to our knowledge, represent the highest output power and gain reported for an inverse class F power amplifier

Country

France

Related Organizations

CY Cergy Paris University
France
Thales Air Defence
United Kingdom
École Nationale Supérieure de l'Électronique et de ses Applications
France

Keywords

[SPI.TRON] Engineering Sciences [physics]/Electronics

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