An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of InxGa1−xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ~50% and ~40% (25 °C), respectively. For In0.18Ga0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of $50~\div ~60~^{\circ }\text{C}$ with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. In comparison, the “standard” In0.23Ga0.77As device performs a negative efficiency trend within a whole temperature range with absolute values below 45% in practically important operating modes of $+ 75\,\,\div \,\,100\,\,^{\circ }\text{C}$ .