Dielectric Engineered Tunnel Field-Effect Transistor

descriptionPublicationkeyboard_double_arrow_right Article , Preprint , Other literature type 01 Oct 2015Embargo end date: 01 Jan 2015Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 36, pages 1,097-1,100 (issn: 0741-3106, eissn: 1558-0563,

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Authors: Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib;

doi: 10.1109/led.2015.2474147 , 10.48550/arxiv.1508.00453

arXiv: 1508.00453

Dielectric Engineered Tunnel Field-Effect Transistor

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Abstract

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the band gap which typically deteriorate the OFF-state performance and SS in conventional TFETs.

3 pages, 3 figures

Related Organizations

Purdue University West Lafayette
United States
Purdue University System
United States

Keywords

Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences

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