Low-subthreshold-swing tunnel transistors

descriptionPublicationkeyboard_double_arrow_right Article 01 Apr 2006Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Electron Device Letters, volume 27, pages 297-300 (issn: 0741-3106,

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Authors: null Qin Zhang; null Wei Zhao; A. Seabaugh;

doi: 10.1109/led.2006.871855

Low-subthreshold-swing tunnel transistors

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Abstract

A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors. One of these principles suggests placing the gate adjacent to the tunnel junction. Modeling of this configuration verifies that sub-60-mV/dec swing is possible.

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University of Notre Dame
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