Heterogeneous Integration on Silicon Photonics

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 01 Dec 2018 Belgium, Germany Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:Proceedings of the IEEE, volume 106, pages 2,258-2,269 (issn: 0018-9219, eissn: 1558-2256,

Copyright policy )Funded by:EC | GrapheneCore2

Authors: Owen Marshall; Mark Hsu; Zhechao Wang; Bernardette Kunert; Christian Koos; Dries Van Thourhout;

doi: 10.1109/jproc.2018.2858542

handle: 1854/LU-8606026

Heterogeneous Integration on Silicon Photonics

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Abstract

To enhance the functionality of the standard silicon photonics platform and to overcome its limitations, in particular for light emission, ultrafast modulation, and nonlinear applications, integration with novel materials is being investigated by several groups. In this paper, we will discuss, among others, the integration of silicon waveguides with ferroelectric materials such as lead zirconate titanate (PZT) and barium titanate (BTO), with electro–optically active polymers, with 2-D materials such as graphene and with III–V semiconductors through epitaxy. We discuss both the technology and design aspects.

Countries

Belgium, Germany

Related Organizations

Karlsruhe Institute of Technology
Germany
Ghent University
Belgium
Katholieke Universiteit Leuven
Belgium

Keywords

ddc:620, silicon photonics, hybrid integration, III-V on silicon epitaxy, Electro-optic modulation, 620, WAVE-GUIDE, laser, ORGANIC HYBRID SOH, BATIO3, integrated optics, QUANTUM-DOT LASERS, HIGH-SPEED, ELECTROOPTICAL, SI, MODULATION, GRAPHENE PHOTODETECTOR, Engineering & allied operations, info:eu-repo/classification/ddc/620, HIGH-RESPONSIVITY, GENERATION

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